Last edited by Samudal
Saturday, April 18, 2020 | History

4 edition of Rare Earth Doped Semiconductors found in the catalog.

Rare Earth Doped Semiconductors

Symposium Held April 13-15, 1993, San Francisco, California, U.S.A. (Materials Research Society Symposium Proceedings)

by Gernot S. Pomrenke

  • 186 Want to read
  • 20 Currently reading

Published by Materials Research Society .
Written in English

    Subjects:
  • Technology,
  • Semiconductors,
  • Science/Mathematics,
  • Surfaces,
  • TEC008000,
  • TEC,
  • Congresses,
  • Electronics - General,
  • Rare earth metals

  • Edition Notes

    ContributionsDietrich W. Langer (Editor)
    The Physical Object
    FormatHardcover
    Number of Pages418
    ID Numbers
    Open LibraryOL8608848M
    ISBN 101558991972
    ISBN 109781558991972


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Rare Earth Doped Semiconductors by Gernot S. Pomrenke Download PDF EPUB FB2

Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare : $ Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge.

This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. This book presents recent developments in Synthesis, Characterization and Luminescence Property of rare-earth doped nanophosphors and Semiconductor Nanostructures.

This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications.

MOVPE of Rare Earth Doped III-V Semiconductors / F. Scholz, J. Weber, K. Pressel and A. Dornen --MOCVD Growth and Properties of Erbium-Doped GaAs / Dietrich W. Langer, Yabo Li, Xiao M. Fang and Victoria Coon --MOCVD Erbium Sources / Anton C.

Greenwald, William S. Rees, Jr. and Uwe W. Lay --Praseodymium Dioxide Doping of [actual symbol not. A discussion of the theories, operating characteristics, and current technology of main fiber laser and amplifier devices based on rare-earth-doped silica and fluorozirconate fibers.

It describes the principles, designs, and properties of the erbium-doped fiber amplifier and its role as the cornerstone component in optical communication systems. Rare-earth-doped SiO2 colloids can be grown in a wet chemical procedure by adding the appropriate rare earth chloride to a solution of tetraethoxysilane, glacial acetic acid, and water.

The size polydispersity of the Rare Earth Doped Semiconductors book can be controlled in a seeded growth process, and monodisperse Er3+-doped particles were grown by covering nm-diameter seed particles Cited by: This chapter focuses on the study on luminescent materials, which consist of oxide compounds (host material) and rare earth ions (as the activator) in the valence state, mostly 3+.

The first part begins with a background study about the luminescence phenomenon, its stages, and the configurational coordinate diagram. Then, we review the notation often used for rare earth Cited by: 4. All rare-earth-doped gain media have in common that the pump and laser transitions are so-called weakly allowed transitions with fairly small oscillator strength.

A consequence of this is that the upper-state lifetimes can be long, i.e. of the order of microseconds to milliseconds, so that substantial amounts of energy can be stored in such media.

This property makes rare-earth-doped. Rare-earth doped glasses are predominantly used to produce fibre- or waveguide-based gain elements for longer haul communications, or perhaps for laser sources. Rare-earth doped wide-bandgap semiconductors are principally, though not wholly, of interest for visible by: This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN.

This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic : Hardcover. Rare-earth doped materials are widely deployed in optoelectronics and optical telecommunications technology, despite the difficulties associated with doping silicon with optically active rare-earth by: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge.

This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. Rare-Earth Doped Semiconductors II: Volume por Salvatore Coffa,disponible en Book Depository con envío gratis.

Rare earth doped semiconductors II: symposium held April, San Francisco, California, U.S.A. Of the several distinct classes of impurity ions, trivalent rare earth (RE) ions constitute highly photostable impurity centers possessing predictable narrow excitation and emission bands and long fluorescence lifetimes (∼1 ms), 20 Especially in a regular crystalline surrounding, the RE ions exhibit a series of sharp spectral lines typical for the 4f–4f transitions.

These features Author: V. Kiisk, Raivo Jaaniso. The properties of these materials are largely determined by the geometry of host matrices and the electronic structure of rare-earth impurity centers.

In this paper we studied the structural proprieties of the impurity centers R3+/ R2+ (R = La, Ce, Pr, Nd, Pm, Gd, Yb, Lu) doped in fluorites crystals MeF2 (Me = Ca, Sr, Ba) by ab initio route. Rare Earth and Transition Metal Doping of Semiconductor Materialexplores traditional semiconductor devices that are based on control of the electron's electric charge.

This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. Properties, Processing and Applications of Glass and Rare Earth-Doped Glasses for Optical Fibres Details R & D on optical fibers is driven by the need for ever higher bandwidth transmission in telecommunications at lower cost.

In the present study rare earth doped (Ln 3+ –TiO 2, Ln = La, Ce and Nd) TiO 2 nanofibers were prepared by the sol–gel electrospinning method and characterized by XRD, SEM, EDX, TEM, and UV-DRS. The photocatalytic activity of the samples was evaluated by Rhodamine 6G (R6G) dye degradation under UV light by: This book provides a snapshot of recent progress in the field of rare-earth doped group III-nitride semiconductors, especially GaN, but extending to AIN and the alloys AlGaN, AlInN and InGaN.

This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic : $   A discussion of the theories, operating characteristics, and current technology of main fiber laser and amplifier devices based on rare-earth-doped silica and fluorozirconate fibers.

It describes the principles, designs, and properties of the erbium-doped fiber amplifier and its role as the cornerstone component in optical communication systems. Photoluminescence of Rare-Earth–Doped Glasses Article (PDF Available) in La Rivista del Nuovo Cimento (12) January with 2, Reads How we measure 'reads'.

The second approach to fabricate rare-earth doped polymer waveguides is obtained by combining the excellent properties of SiO2 as a host for rare-earth ions with the easy processing of. Rare earths are chemical elements found in the Earth’s crust. They are used in cars, consumer electronics, computers, communications, clean energy and defense systems.

The big market for rare earths is magnets. In semiconductor production, rare earths are used in high-k dielectrics, CMP slurries and other applications. A comprehensive review of up-conversion (UP) and down-conversion (DC) or down shifting of rare earth (RE) doped zinc oxide (ZnO) nanophosphors is presented.

Research interest in the development of RE3+ doped ZnO for UP and DC nanophosphors has been encouraged by the potential application of these materials in light emitting diodes and different types of Cited by: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron electric charge.

This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. Novel Functions of Rare-Earth-Doped Glasses with Modifi ed Microstructures, Jianrong Qiu Rare Earth Doped Dielectric Nanostructured Thin Films, Rosalía Serna and Miguel Jiménez de Castro Tin-Doped Nanocrystalline TiO 2 Photocatalysts, David Tudela, Fernando Fresno, and Juan M.

Coronado 20 0 / ca. pages / Hardcover / ISBN: Recent developments in the areas of rare-earth doped semiconductors and insulators are discussed and new classes of materials that open up new possibilities for Author: Anthony Kenyon.

Get this from a library. Magneto-Optical Properties of Rare-Earth Doped Semiconductors. [Andrew J Helbers; Lehigh University. Physics.] -- There is interest in magnetic properties of doped semiconductors for possible applications in spintronics and for gaining further insight into the incorporation sites of the dopants.

To this end. The doping of semiconductor by rare earth metal nanoparticle is an effective way for increasing photocatalytic activity. Zinc oxide and Lanthanum doped Zinc oxide nanoparticles were synthesized by modifying the gel-combustion method. It was found that La can greatly enhance the cytotoxicity and.

Doping in III-V Semiconductors - Ebook written by E. Fred Schubert. Read this book using Google Play Books app on your PC, android, iOS devices. Download for offline reading, highlight, bookmark or take notes while you read Doping in III-V : E. Fred Schubert.

A dopant, also called a doping agent, is a trace of impurity element that is introduced into a chemical material to alter its original electrical or optical properties. The amount of dopant necessary to cause changes is typically very low.

When doped into crystalline substances, the dopant's atoms get incorporated into its crystal lattice. The crystalline materials are frequently. Rare-earth-doped nanocrystalline silicon: excitation and de-excitation mechanisms and implications for waveguide amplifier applications Author(s): Se-Young Seo; Hak-Seung Han; Jung H.

Shin; Dong Su Kim. Spectroscopy of Lanthanide Doped Oxide Materials provides a comprehensive overview on the most essential characterization techniques of these materials, along with their key applications. The book describes the application of optical spectroscopy of lanthanides doped inorganic phosphor hosts and gives information about their structure and morphology, binding energies.

Try the new Google Books. Check out the new look and enjoy easier access to your favorite features Rare earth doped fiber lasers and amplifiers power parameters peak photon Phys polarization pulse pump and signal pump band pump wavelength Q-switched quantum rare earth rare earth doped rare earth ions reflector resonator saturation shown.

Rare earth (RE) elements are sixth period elements in the periodic table, from 57 La to 71 Lu. Because of many similarities, such as ionic +3 charges and similar ionic radius, 39 Y that also belongs to the III transition group and is positioned just above 57 La is also often considered as a part of the RE group.

Even though the group is regarded as rare earth elements, they are not Cited by: 1. Luminescence properties of rare-earth doped oxide materials. , DOI: /B Maria José Valenzuela Bell, Noelio Oliveira Dantas, Luciana Reyes Pires Kassab, Virgílio de Carvalho dos Anjos. Thermo-optical properties of glasses doped with semiconductor or metallic nanoparticles and rare-earth by: The unique luminescent properties exhibited by rare earth ion-doped upconversion nanocrystals (UCNPs), such as long lifetime, narrow emission line, high color purity, and high resistance to photobleaching, have made them widely used in many areas, including but not limited to high-resolution displays, new-generation information technology, optical communication, Cited by: Books.

Publishing Support. Login. Reset your password. If you have a user account, you will need to reset your password the next time you login.

You will only need to do this once. Find out more. IOPscience login / Sign Up. Please note. Perhaps not in its current form, but in a "Semiconductor physics dictates that rare earth metals be used in the following applications:" form, it's the best answer to that question.

I don't know semiconductor physics yet, so I can't provide that answer. \$\endgroup\$ – Kevin Vermeer Jul 6 '11 at As a newly noninvasive emerging modality, NIR-II fluorescence imaging (– nm) has many advantages over conventional visible and NIR-I imaging (– nm). Unfortunately, only a few NIR-II fluorophores are suitable for bone imaging.

Here, we report an NIR-II fluorophore based on DSPE-mPEG encapsulated rare earth doped nanoparticles ([email protected] Cited by: Rare earth doping ions can improve the spectral response of this semiconductor to the visible region. This work evaluated the dopant effect of rare earth ions such as La, Ce, Nd, Pr, Sm, Eu, and Gd in titania for the solar photodegradation of Diuron and methyl parathion.

The increase in the content up to % of dopants decreases photoactivity due to the formation of photo Author: Juan C. Arévalo Pérez, José Gilberto Torres Torres, Durvel de la Cruz Romero, Hermicenda Perez-Vidal.